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Northwestern University

Sungkyu Kim, PhD

 

sungkyuPostdoctoral Fellow, Materials Science and Engineering & NUANCE Center
Northwestern University
Room: JG14, Technological Institute Building
2145 Sheridan Rd
Evanston IL, 60208
Phone: (847) 467-4992
Email: sungkyu.kim@northwestern.edu


Educational Background

2016.09 - present Postdoctoral Fellow, Materials Science and Engineering, Northwestern University
2012 - 2016 Ph.D., Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Korea (Advisor: Dr. Jeong Yong Lee)
2010 - 2012 M.S., Materials Science and Engineering, Korea Advanced Institute of Science and Engineering, Korea (Advisor: Dr. Jeong Yong Lee)
2003 - 2010 B.S., Materials Science and Engineering, Sungkyunkwan University, Korea 


Research Objective and Approach

Real time observation of the electrical and chemical reactions in 2D materials, oxide-based materials, and energy materials using (S)TEM technique. 


References and Publications

  • H. Park, K. R. Yoon, S. K. Kim, I.-D. Kim, J. Jin, Y. H, Kim, B.-S. Bae. Highly conducting In2O3 nanowire network with passivating ZrO2 thin film for solution-processed field effect transistors. Advanced Electronic Materials 2016

  • J. Jeong, J. E. Choi, Y.-J. Kim, S. Hwang, S. K. Kim, J. K. Kim, H. Y. Jeong, and Y. J. Hong. Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes. Applied Physics Letters 2016, 109, 101103

  • S. K. Kim, J. Y. Kim, B. C. Jang, M. S. Cho, S.-Y. Choi, J. Y. Lee, and H. Y. Jeong. Conductive graphitic channel in graphene oxide-based memristive devices. Advanced Functional Materials 2016

  • C. H. Choi, Y. T. Oh, K.-J. Kim, J.-S. Park, H. Sukegawa, S. Mitani, J. Lee, S. K. Kim, Y. Song. Temperature dependency of reliability characteristics for magnetic tunnel junctions with a thin MgO dielectric film. Semiconductor Science and Technology 2016, 31, 075004

  • B. C. Jang, H. Seong, S. K. Kim, J. Y. Kim, B. J. Koo, J. Choi, S. Y. Yang, S. G. Im, and S.-Y. Choi. Flexible nonvolatile polymer memory array on plastic substrate via initiated chemical vapor deposition. ACS Applied Materials & Interfaces 2016, 8, 12951

  • C.-M. Choi, Y.-T. Oh, K.-J. Kim, J.-S. Park, H. Sukegawa, S. Mitani, S. K. Kim, J. Y. Lee, and Y.-H. Song. Temperature dependence of reliability characteristics for magnetic tunnel junctions with a thin MgO dielectric film. Semiconductor Science and Technology 2016, 31, 075004

  • J. S. Heo, J.-W. Jo, J. Kang, C.-Y. Jeong, H. Y. Jeong, S. K. Kim, K. Kim, H.-I. Kwon, J. Kim, Y.-H. Kim, M.-G. Kim, and S. K. Park. Water-mediated photochemical treatment for the low-temperature passivation of metal-oxide thin-film transistors. ACS Applied Materials & Interfaces 2016, 8, 10403

  • S. K. Kim, J.Y. Kim, S.-Y. Choi, J. Y. Lee, and H. Y. Jeong. Direct observation of conducting nanofilaments in graphene-oxide-resistive switching memory. Advanced Functional Materials 2015, 25, 6710

  • B. C. Jang, H. Seong, J. Y. Kim, B. J. Koo, S. K. Kim, S. Y. Yang, S. G. Im, and S.-Y. Choi. Ultra-low power, highly uniform polymer memory by inserted multilayer graphene electrode. 2D Materials 2015, 2, 044013

  • W. I. Park, J. M. Yoon, M. Park, J. Lee, S. K. Kim, J. W. Jeong, K. Kim, H. Y. Jeong, S. Jeon, K. S. No, J. Y. Lee, and Y. S. Jung. Self-assembly-induced formation of high-density silicon oxide memristor nanostructures on graphene and metal electrodes. Nano Letters 2012, 12, 1235

  • S. Kim, H. Y. Jeong, S. K. Kim, S.-Y. Choi, and K. J. Lee. Flexible memristive memory array on plastic substrates. Nano Letters 2011, 11, 5438

  • H. Y. Jeong, S. K. Kim, J. Y. Lee, and S.-Y. Choi. Role of interface reaction on resistive switching of metal/amorphous TiO2/Al RRAM devices. Journal of The Electrochemical Society 2011, 158, H979

  • H. Y. Jeong, S. K. Kim, J. Y. Lee, and S.-Y. Choi. Impact of amorphous titanium oxide film on the device stability of Al/TiO2/Al resistive memory. Applied Physics A: Materials Science & Processing 2011, 102, 967

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